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mcq on Bipolar Junction Transistor for NEET Students
An NPN transistor begins to conduct when
(A) both collector and emitter have negative potential compared to the Base
(B) the collector is at a higher potential while the emitter is at the same level as the Base
(C) the collector is more positive and the emitter is more negative with respect to the Base
(D) both collector and emitter are at a higher potential compared to the Base
Option c – the collector is more positive and the emitter is more negative with respect to the Base
When functioning as a voltage stabilizer, a Zener diode is
(A) connected in parallel with the load and in reverse bias
(B) connected in parallel with the load and in forward bias
(C) connected in series with the load and in forward bias
(D) connected in series with the load and in reverse bias
Option a – connected in parallel with the load and in reverse bias
In a junction diode, holes are generated because of
(A) protons
(B) neutrons
(C) surplus electrons
(D) absence of electrons
Option d – absence of electrons
In an NPN transistor, if the collector current is 11 mA and 89% of emitted electrons reach the collector, the emitter current will be
(A) 1.2 mA
(B) 12.3 mA
(C) 1.12 mA
(D) 11.2 mA
Option b – 12.3 mA
A Zener diode rated at 6 V has a power limit of 300 mW. The highest current it can withstand is
(A) 50 mA
(B) 48 mA
(C) 46 mA
(D) 44 mA
Option a – 50 mA
If an amplifier has a voltage gain of 10 after applying 8% negative feedback, the voltage gain without feedback is
(A) 66.67
(B) 100
(C) 50
(D) 75
Option c – 50
The energy band gap values in electron volts for silicon and germanium respectively are
(A) 0.7, 1.1
(B) 1.1, 0.7
(C) 1.7, 0.7
(D) 0.7, 1.7
Option b – 1.1, 0.7
The type of LED used in television remote systems is
(A) Blue
(B) Red
(C) Green
(D) Infrared
Option d – Infrared
For an n-type semiconductor, which of the following are true?
(A) silicon doped with arsenic and germanium doped with boron
(B) silicon doped with aluminum and germanium doped with boron
(C) silicon doped with arsenic and germanium doped with phosphorus
(D) only silicon doped with arsenic
Option a – silicon doped with arsenic and germanium doped with boron
The voltage gain of a transistor amplifier
(A) is minimal at low and high frequencies and steady at mid frequencies
(B) is maximum at low and high frequencies and constant in between
(C) is high at high frequencies but low otherwise
(D) remains unchanged across all frequencies
Option a – is minimal at low and high frequencies and steady at mid frequencies
If the electron to hole concentration ratio in a semiconductor is 9:7 and the current ratio is 9:5, then the drift velocity ratio is
(A) 7:9
(B) 7:5
(C) 9:7
(D) 5:7
Option b – 7:5
An intrinsic semiconductor behaves as an insulator when the temperature is
(A) 0°C
(B) 0 K
(C) 300 K
(D) -100°C
Option b – 0 K
The potential barrier in a p-n junction is influenced by
(A) doping level and type of material
(B) doping level, material type, and temperature
(C) material type and temperature only
(D) material type only
Option b – doping level, material type, and temperature
A gallium arsenide phosphide (GaAsP) LED that emits Light of wavelength 6533 Å has an energy band gap of
(A) 1.9 eV
(B) 2.7 eV
(C) 1.5 eV
(D) 2.3 eV
Option a – 1.9 eV
The potential across the depletion layer arises due to
(A) electrons
(B) ions
(C) holes
(D) the forbidden energy band
Option b – ions
A p-n junction diode is mainly used as
(A) a rectifier
(B) an amplifier
(C) an oscillator
(D) none of the above
Option a – a rectifier
In a full-wave rectifier using two identical diodes with negligible forward resistance, if the input has a peak voltage of 120 V, the rms voltage across the resistor is
(A) 48.58 V
(B) 84.85 V
(C) 58.48 V
(D) 85.84 V
Option b – 84.85 V
Choose the incorrect statement
(A) The resistance of pure semiconductors drops as temperature increases
(B) Adding trivalent atoms to pure silicon creates p-type semiconductors
(C) Electrons are the major carriers in p-type semiconductors
(D) A p-n junction serves as a diode in semiconductors
Option c – Electrons are the major carriers in p-type semiconductors
The number of NOR gates needed to construct an OR gate is
(A) 3
(B) 2
(C) 4
(D) 5
Option b – 2
In forward bias, a Zener diode behaves as
(A) a transistor
(B) a regular p-n junction diode
(C) a voltage regulator
(D) an oscillator
Option b – a regular p-n junction diode
For a CE amplifier with a voltage gain of 60, input impedance of 1200 ohms, and output impedance of 300 ohms, the power gain is
(A) 24 dB
(B) 42 dB
(C) 250 dB
(D) 12500 dB
Option b – 42 dB
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