MCQs on Modern Physics. We covered all the MCQs on Modern Physics in this post for free so that you can practice well for the exam.
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MCQ on Modern Physics for Students
The impurity atoms with which pure silicon may be doped to make it a p-type semiconductor are those of
(a) phosphorus
(b) boron
(c) antimony
(d) aluminum
Option b – boron
The electrical conductivity of pure germanium can be increased by
(a) increasing the temperature
(b) doping acceptor impurities
(c) doping donor impurities
(d) all of the above
Option d – all of the above
A semiconductor is doped with a donor impurity then
(a) the hole concentration increases
(b) the hole concentration decreases
(c) the electron concentration increases
(d) the electron concentration decreases
Option b – the hole concentration decreases
According to Bohr’s model of hydrogen atom
(a) the linear velocity of the electron is quantized.
(b) the angular velocity of the electron is quantized.
(c) the linear momentum of the electron is quantized.
(d) the angular momentum of the electron is quantized.
Option d – the angular momentum of the electron is quantized
Electric conduction in a semiconductor takes place due to
(a) electrons only
(b) holes only
(c) both electrons and holes
Option c – both electrons and holes
In a semiconductor
(a) there are no free electrons at 0 K
(b) there are no free electrons at any temperature
(c) the number of free electrons increases with the temperature
(d) the number of free electrons is less than that in a conductor
Option a – there are no free electrons at 0 K
A p-type semiconductor is
(a) positively charged.
(b) negatively charged
(c) uncharged
(d) uncharged at 0K but charged at higher temperatures
Option a – positively charged
Forward biasing is that in which applied voltage
(a) increases the potential barrier
(b) cancels the potential barrier
(c) is equal to 1.5 volts
(d) None of these
Option b – cancels the potential barrier
In the V-I characteristic of a p-n junction, reverse biasing results in
(a) leakage current
(b) the current barrier across the junction increases
(c) no flow of current
(d) large current
Option a – leakage current
Zener diode is used for
(a) amplification
(b) rectification
(c) stabilization
(d) all of the above
Option c – stabilization
The minimum energy required to eject an electron, from the metal surface is called
(a) atomic energy
(b) mechanical energy
(c) electrical energy
(d) workfunction
Option d – workfunction
X-rays are
(a) a stream of electrons
(b) a stream of positively charged particles
(c) electromagnetic radiations of high frequency
(d) a stream of unchanged particles
Option c – electromagnetic radiations of high frequency
The majority of charge carriers in a p-type semiconductor are
(a) free electrons
(b) conduction electrons
(c) ions
(d) holes
Option d – holes
The ionization energy of hydrogen atom in the ground state is
(a) 13.6 MeV
(b) 13.6 eV
(c) 13.6 Joule
(d) Zero
Option b – 13.6 eV
Which of the following planet is called the red planet?
(a) Mars
(b) Jupiter
(c) Saturn
(d) Uranus
Option a – Mars
The drift current in a p-n junction is
(a) from the n-side to the p-side
(b) from the p-side to the n-side
(c) from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse biased
(d) from the p-side to the n-side if the junction is forward-biased and in the opposite direction if it is reverse-biased
Option a – from the n-side to the p-side
The diffusion current in a p-n junction is greater than the drift current in magnitude
(a) if the junction is forward-biased
(b) if the junction is reverse-biased
(c) if the junction is unbiased
(d) in no case
Option a – if the junction is forward-biased
In a p-type semiconductor, the acceptor valence band is
(a) close to the valence band of the host crystal
(b) close to the conduction band of the host crystal
(c) below is the conduction band of the host crystal
(d) above the conduction band of the host crystal
Option a – close to the valence band of the host crystal
In an n-type semiconductor, the donor valence band is
(a) above the conduction band of the host crystal
(b) close to the valence band of the host crystal
(c) close to the conduction band of the host crystal
(d) below is the valence band of the host crystal
Option c – close to the conduction band of the host crystal
In semiconductors, at room temperature
(a) the conduction band is completely empty
(b) the valence band is partially empty and the conduction band is partially filled
(c) the valence band is completely filled and the conduction band is partially filled
(d) the valence band is completely filled
Option c – the valence band is completely filled and the conduction band is partially filled
The diffusion current in a p-n junction is
(a) from the n-side to the p-side
(b) from the p-side to the n-side
(c) from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse biased
(d) from the p-side to the n-side if the junction is forward-biased and in the opposite direction if it is reverse biased
Option b – from the p-side to the n-side
If the two ends of a p-n junction are joined by a wire
(a) there will not be a steady current in the circuit
(b) there will be a steady current from the n-side to the p-side
(c) there will be a steady current from the p-side to the n-side
(d) there may or may not be a current depending upon the resistance of the connecting wire
Option a – there will not be a steady current in the circuit
What is the resistivity of a pure semiconductor at absolute zero? ( MCQs on Modern Physics )
(a) Zero
(b) Infinity
(c) Same as that of conductors at room temperature
(d) Same as that of insulators at room temperature
Option b – Infinity
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